
SK Hynix Develops UFS 4.1 Solution with 321-Layer NAND
SK hynix Inc. announced today that it has developed UFS 4.1 solution product adopting the world's highest 321-layer 1 Tb triple level cell 4D NAND flash for mobile applications. The development comes amid increasing requirements for high performance and low power of a NAND solution product to ensure a stable operation of on-device AI. The company expects the UFS 4.1 product, optimized for AI workload, to help enhance its memory leadership in the flagship smartphone markets.
With an increase in demand for on-device AI leading to greater importance of the balance between computation capabilities and battery efficiency of a device, the mobile market is now requiring thinness and low power from a mobile device. The latest product comes with a 7% improvement in power efficiency, compared with the previous generation based on 238-high NAND and a slimmer 0.85 mm thickness, down from 1 mm before, to fit into ultra-slim smartphones.
With an increase in demand for on-device AI leading to greater importance of the balance between computation capabilities and battery efficiency of a device, the mobile market is now requiring thinness and low power from a mobile device. The latest product comes with a 7% improvement in power efficiency, compared with the previous generation based on 238-high NAND and a slimmer 0.85 mm thickness, down from 1 mm before, to fit into ultra-slim smartphones.