Yangtze Memory Technology Company (YMTC), China's ambitious new memory manufacturer specializing in NAND flash, launched the first client-segment SSDs under its own brand, the PC005 Active series and the SC001 Active series. Rumors of YMTC developing its own brand SSDs surfaced first in June. Prior to that in May, it was reported that Phison could add support for YMTC NAND flash chips to variants of its existing SSD controllers, and so it's highly likely that the new YMTC SSDs use Phison-sourced controllers. Interestingly, the company deployed its first-generation Xtracking 64-layer 3D TLC NAND flash chips instead of its 2nd generation 128-layer QLC chips.

The PC005 Active comes in the M.2-2280 form-factor with PCI-Express 3.0 x4 host interface, leveraging the NVMe 1.3 protocol. The drive is available in 1 TB. 512 GB, and 256 GB capacities. All three variants read sequentially at speeds of up to 3,500 MB/s, wiring at up to 2,900 MB/s, up to 2,500 MB/s, and up to 1,200 MB/s, respectively. Their endurance is rated at 640 TBW for the 1 TB version, 320 TBW for the 512 GB, and 200 TBW for the 256 GB variant. All three are backed by 5-year warranties.

Phison Electronics , the industry's leader in NAND flash controllers and storage solutions, announces availability of the world's first 15.36 TB QLC customizable Enterprise SSD solution based on Phison's S12DC controller. Phison provides its customers with industry leading SSDs that are customized to their needs by leveraging Phison's firmware, controller, PCBA design, and manufacturing. The S12DC QLC SSD is an ideal storage solution by delivering higher performance, lower power consumption, and greater rack storage density for read intensive storage applications that currently source hard disk drives.

TEAMGROUP today launches QX, the industry's first and largest consumer-grade, 15.3 TB 2.5" SATA solid state drive, shaking the industry with its powerful debut. The QX uses the latest 3D QLC flash memory and has up to 2,560 TBW of write life. It is super durable compared to other products in the industry, lightweight and compact, yet offers a high 15.3 TB storage capacity. The QX will revolutionize the consumer-grade 2.5" SATA SSD market with its market dominating specification.

The QX uses the latest 3D QLC flash memory, which not only has the industry's first and largest 15.3 TB storage capacity but also has industry's first write life up to 2,560 TBW. The ultra-high durability provides consumers with stability and reliability. The powerful QX supports smart dual Cache, including SLC Caching technology and DRAM Cache Buffer, delivering 560/480 MB per second of ultra-fast read/write speed for smooth user experience. At the same time, it also excellent features such as low power consumption, shock resistance, noise-free, etc. With the huge terabyte storage capacity of a mechanical hard drive and the read/write performance not found in traditional mechanical hard drives, it can revolutionize and redefine the consumer-grade 2.5" SATA SSD with its massive 15.3 TB storage capacity.

Nimbus Data, a leading innovator in flash memory storage, today unveiled ExaDrive NL, the world's highest capacity QLC flash SSD and the industry's first QLC flash SAS SSD for enterprise workloads. With industry-leading capacity up to 64 TB in a single SSD, ExaDrive NL helps organizations eliminate server sprawl, reduce software licensing costs, improve efficiency, and reduce data center operating costs by up to 75%.

"Customers are always looking for more capacity and more efficient ways to access their data," said Jeff Janukowicz, Research Vice President, IDC. "High capacity QLC flash SSDs, like Nimbus Data's ExaDrive NL, help organizations migrate to enterprise-grade flash storage as cost-effectively as possible, while simplifying hybrid storage that blends HDDs and SSDs seamlessly to optimize cost and performance for their workloads."

The new UD70 PCIe Gen 3x4 is an all-around performer that's perfect for DIY system builders, casual gamers and video editors, and simply those who are looking to upgrade their PC. With 3D QLC NAND storage technology, the UD70 incorporates a much higher memory cell density, allowing for greater storage capacity on a smaller footprint - up to 2 TB. Plus, NVMe 1.3 support, read speeds up to 3,400 MB/s, and write speeds up to 3,000 MB/s make this M.2 2280 SSD a force to be reckoned with.

The UD70 is specially engineered with a dual self-cooling system that operates via active state power management (ASPM) and autonomous power state transition (APST). In addition, thermal throttling effectively monitors and controls the temperature to prevent sudden speed drops or damage of stored data caused by high temperature. With these advanced mechanisms in place, the UD70 will keep its cool to sustain a safe and optimal level of performance at all times, which translates to a longer and more reliable lifespan.

Enmotus is the company behind the FuzeDrive software on which the original AMD StoreMI technology is based, which juggles data among your various physical storage devices based on heat (frequency of access), improving performance. The company has now come up with its first hardware-product, the FuzeDrive NVMe SSD. Built in an M.2-2280 form-factor, the drive offers 1.6 TB of capacity, and combines a Phison E12-series controller with 96-layer 3D QLC NAND flash memory. The drive takes advantage of PCI-Express gen 3.0 x4.

Performance numbers of the FuzeDrive 1.6 TB SSD as rated by its makers include up to 3,470 MB/s sequential reads, up to 3,000 MB/s sequential writes; and an endurance rating of 5,000 TBW. The drive uses a 128 GB SLC cache to speed up write performance in moderate bursts. There's more to this drive than just its hard-product, Enmotus includes software that juggles data between the 128 GB pseudo-SLC and QLC areas; and of course the FuzeDrive software that lets you build volumes of up to 15 TB in size by throwing in fixed physical drives of any shape and size. Enmotus is pricing the FuzeDrive 1.6 TB NVMe SSD at $349.Update Jul 3rd: We've learned through Enmotus that this drive has a permanent 128 GB SLC cache that's exclusive of the 1.6 TB QLC user-area. We believe this drive is possibly a 2 TB QLC drive, in which a quarter of the user area is permanently assigned to work as SLC, with 30,000 P/E cycles. The FuzeDrive firmware transfers hot data between the SLC and QLC areas of the drive.

Samsung Electronics today introduced its second-generation quad-level cell (QLC) flash drive, the 870 QVO SATA SSD, that is setting a new standard for high-capacity consumer storage. Featuring an industry-leading capacity of up to eight terabytes (TB), the new SSD delivers an uncompromising mix of speed, storage capacity and reliability for mainstream and professional PC users.

In the past, consumers have had to choose between SSDs - which provide superior performance - and HDDs, which traditionally offer greater capacity. Samsung's 870 QVO SSD, however, is able to reliably offer the best of both worlds, making it an optimal choice for mainstream PC users who prioritize performance and value, as well as for professional users who require high levels of capacity.

Sabrent, a company focused on making storage devices and PC accessories, today announced the release of the world's first 8 terabyte NVMe SSD delivered in the M.2 form factor. The new SSD dubbed Rocket Q 8 TB NVMe PCIe M.2 SSD is a real treat for all SSD enthusiasts. Besides its staggering capacity, it has plenty of features as well. Built on top of 3D QLC NAND Flash memory chips, the Rocket Q SSD is supposed to deliver very high speeds on PCIe 3.0 x4 bus. With up to 3.4 GB/sec reads, and up to 3 GB/sec writes, the SSD is pushing the limits of the PCIe 3.0 x4 bus that it is designed to work for.

Rocking a Phison's E12S controller, it is supposed to maintain high speeds even on random 4K reads and writes. The company didn't reveal too many details about the performance, however, we can wait for some reviews. The SSD is PCIe 3.1 Compliant, NVMe 1.3 Compliant, and supports SMART and TRIM commands. With a purchase of this SSD, you get a free copy of Sabrent Acronis True Image for Sabrent Software for easy cloning. Pricing and availability are unknown.

Micron Technology, Inc., today announced new client solid-state drives (SSDs) that bring NVMe performance to client computing applications, freeing laptops, workstations and other portables from legacy architectures that can rob devices of battery power, performance and productivity. The Micron 2300 SSD combines the power and density needed to drive compute-heavy applications in a compact form factor with the reduced power consumption modern mobile users demand. For the first time, Micron brings together NVMe performance and low-cost quad-level-cell (QLC) NAND in the Micron 2210 QLC SSD. It combines fast NVMe throughput and Micron's leadership in QLC technology to offer flash capabilities at hard disk drive-like price points while reducing power consumption by 15 times when compared to hard drives.

ADATA today announced the Falcon line of SSDs in the M.2-2280 form-factor, with NVMe 1.3 protocol support, leveraging PCI-Express 3.0 x4 host interface. The drives are characterized by an aluminium heatspreader on top of the NAND flash chips and controller, which isn't just an adhesive metal peal, but a 1 mm-thick metal plate. The Falcon comes in capacities of 256 GB, 512 GB, 1 TB, and 2 TB; and uses 3D NAND flash memory (likely QLC).

The ADATA Falcon offers sequential speeds of up to 3,100 MB/s reads, with up to 1,500 MB/s writes; and up to 180,000 IOPS 4K random access. The 2 TB variant offers 1,200 TBW endurance, the 1 TB variant offers 600 TBW, the 512 GB variant 300 TBW, and the 256 GB variant 150 TBW. ADATA is backing the drives with a 5-year warranty. The company didn't reveal pricing.

China's plans for world domination include the country slowly retracting itself from its dependency on western companies' technologies, via heavy acceleration of plans for and production of a myriad of semiconductor technologies. One of the more important technologies amongst those due to its relative ease of manufacture and overall market value is, of course, NAND technology. And the days of China being undoubtedly behind other manufacturers' technologies seems to be coming to an end, with the countries' Yangtze Memory Technologies (YMTC) 64-layer Xtacking TLC NAND design already achieving pretty impressive results compared to its mainstream counterparts.

Xtacking technology is expected to disrupt the $52 billion NAND memory market and its big players such as Micron, Samsung, SK Hynix, Kioxia, Western Digital, and Intel. The technology separates periphery circuits and memory cell operations towards a separate wafer, which allows for increased performance and throughput compared to other designs. Senior technical fellow Jeongdong Choe at Ottawa, Canada-based TechInsights (a company specializing in reverse-engineering semiconductor technology) has told EE Times YMTC's 64-layer, 256 Gb die bit density is 4.41 Gb/mm, which is higher than the Samsung equivalent 256 Gb die at 3.42 Gb/mm.

Mainland Chinese semiconductor firm Yangtze Memory Technologies Co (YMTC), has reportedly struck a NAND flash memory chip supply deal with popular solid-state storage products brand Lexar, which specializes in SSDs, memory cards, and USB flash drives; and more importantly, enjoys a prominent market presence in the West. Micron Technology had, in 2017, sold the Lexar brand to Longsys, a Chinese electronics conglomerate. YMTC's first products sold to Lexar will be a 512 Gbit 128-layer 3D QLC NAND flash memory chip for Lexar's nCard line of microSDXC cards, which ships in 64 GB, 128 GB, and 256 GB densities, offering transfer speeds of up to 90 MB/s reads, with up to 70 MB/s writes.

Micron Technology, Inc., today announced new Micron 5210 ION enterprise SATA SSD capacity and features, solidifying Micron's leadership in QLC technology volume production. The world's first QLC solid-state drive (SSD), the Micron 5210 is based on the company's advanced QLC NAND technology and quickly replacing legacy hard disk drives (HDDs).

From SQL and NoSQL databases to big data and analytics, object stores and vSAN capacity tiers, customers are now reaping the benefits of NAND flash on performance-sensitive workloads that used to live on HDDs. Rapidly supplanting 10K HDDs, the Micron 5210 delivers 175 times faster random reads, 30 times faster random writes, two times more sequential throughput, and three times more energy efficiency than the largest 10K RPM HDDs - all at a compelling price point.

Here's the first picture of the Crucial P2, the company's second M.2 NVMe client SSD series based on QLC NAND flash memory, and successor to the Crucial P1. The drive sticks to PCI-Express gen 3.0 x4 as its host interface, but increases sequential read speeds over the P1. Available in 250 GB and 500 GB models to begin with, the P2 offers sequential transfer rates of up to 2100 MB/s reads with up to 1150 MB/s writes for the 250 GB variant; and up to 2300 MB/s reads with up to 940 MB/s writes on the 500 GB variant. There's no word on whether the P2 uses the same QLC NAND chips as the P1, but we do spy a DRAM cache chip. Endurance of the P2 is rated at 150 TBW, and Crucial is backing them with 5-year warranties when they come out in the near future. Pricing in Europe is expected to be about 59€ for the 250 GB model, and 70€ for the 500 GB one.

Update 15:54 UTC: Crucial launched the drive Stateside at $54.99 for the 250 GB model, and $64.99 for the 500 GB model. We've added more images.

Last week, Intel's memory and storage group produced Intel QLC 3D NAND solid-state drive (SSD) number 10 million based upon the QLC NAND die built in Dalian, China. Production began in late 2018, and this milestone establishes QLC (quadruple-level cell memory) as a mainstream technology for high-capacity drives.

"Many have talked about QLC technology, but Intel has shipped it, and at scale," said Dave Lundell, director of Client SSD Strategic Planning and Product Marketing at Intel. "We have seen strong demand for the cost-effective capacity of our standalone QLC SSD (Intel SSD 660p) and the performance of our Intel Optane Technology + QLC solution (Intel Optane Memory H10)."

Kioxia Corporation, the world leader in memory solutions, today announced that it has successfully developed its fifth-generation BiCS FLASH three-dimensional (3D) flash memory with a 112-layer vertically stacked structure. Kioxia plans to start shipping samples of the new device, which has a 512 gigabit (64 gigabytes) capacity with 3-bit-per-cell (triple-level cell, TLC) technology, for specific applications in the first quarter of calendar year 2020. The new device aims to fulfill ever-growing bit demands for a wide variety of applications, including traditional mobile devices, consumer and enterprise SSDs, emerging applications enabled by the new 5G networks, artificial intelligence and autonomous vehicles.

Going forward, Kioxia will apply its new fifth-generation process technology to larger capacity devices, such as 1 terabit (128 gigabytes) TLC and 1.33 terabit 4-bit-per-cell (quadruple-level cell, QLC) devices.

Phison Electronics, the industry's leader in flash controller and NAND storage solutions, is demonstrating mainstream performance using 4-bits per cell QLC NAND flash controllers and SSDs at the Consumer Electronics Show 2020 (CES) in Las Vegas, Nevada. In its private suite, Phison is showcasing the addition of support for QLC NAND to its already shipping E16 PCIe Gen 4x4, E12 PCIe Gen 3x4, and S12 SATA controllers that use TLC NAND. Phison's industry leading approach leverages highly successful controllers that were qualified by tier-1 OEMs, are in mass production now, and extends new SSD designs to utilize either TLC or QLC NAND. Phison's proprietary QLC NAND controller technology enables higher SSD capacities in industry standard form factors while meeting the performance demands of mainstream applications.

Phison's flagship E16 series controller for PCIe Gen 4x4 NVMe SSDs can achieve up to 4 TB in capacity with QLC NAND and reaches speeds of 4.9 GB/s for sequential reads and 3.8 GB/s for sequential writes. The E12 series controller enables PCIe Gen 3x4 NVMe SSDs and has a capacity of up to 8 TB and speeds of 3.4 GB/s sequential reads, 3.0 GB/s sequential writes with QLC NAND. For the SATA interface, Phison is also demonstrating the S12 controller series SSDs with up to 16 TB using QLC NAND and performance at 550 MB/s sequential reads and 530 MB/s sequential writes. Phison's DRAM-less S13T controllers enable smaller form factors, have a capacity of up to 2 TB, and operate at 550 MB/s sequential reads and 500 MB/s sequential writes.

Kioxia Corporation today announced the development of the world's first three-dimensional (3D) semicircular split-gate flash memory cell structure "Twin BiCS FLASH" using specially designed semicircular Floating Gate (FG) cells. Twin BiCS FLASH achieves superior program slope and a larger program/erase window at a much smaller cell size compared to conventional circular Charge Trap (CT) cells. These attributes make this new cell design a promising candidate to surpass four bits per cell (QLC) for significantly higher memory density and fewer stacking layers. This technology was announced at the IEEE International Electron Devices Meeting (IEDM) held in San Francisco, CA on December 11th.

3D flash memory technology has achieved high bit density with low cost per bit by increasing the number of cell stacked layers as well as by implementing multilayer stack deposition and high aspect ratio etching. In recent years, as the number of cell layers exceeds 100, managing the trade-offs among etch profile control, size uniformity and productivity is becoming increasingly challenging. To overcome this problem, Kioxia developed a new semicircular cell design by splitting the gate electrode in the conventional circular cell to reduce cell size compared to the conventional circular cell, enabling higher-density memory at a lower number of cell layers.

Intel late Monday released its SSD 665p "Neptune Harbor Refresh" line of client-segment M.2 NVMe SSDs. The series was announced in September at the company's Storage Day event in South Korea. Built in the M.2-2280 form-factor, the drives feature PCI-Express 3.0 x4 host interface. They combine a Silicon Motion SMI2263 series controller with Intel's new 96-layer 3D QLC NAND flash memory. The previous-generation SSD 660p series use 64-layer chips. The SMI2263 controller is cushioned by an LPDDR3 DRAM cache.

Intel is debuting the SSD 665p series with just two models, 1 TB and 2 TB, skipping sub-terabyte capacities such as 500 GB. The 2 TB variant offers sequential transfer speeds of up to 2000 MB/s reads and up to 2000 MB/s writes; and random access speeds of up to 250,000 IOPS on both reads and writes. The 1 TB variant offers up to 2000 MB/s sequential reads, up to 1925 MB/s sequential writes, up to 160,000 IOPS random reads, and up to 200,000 IOPS random writes. The company didn't reveal endurance ratings for the drives. The 1 TB variant is priced at USD $125, while the 2 TB variant hasn't yet been priced. Both drives are backed by 5-year warranties.

TechPowerUp and Colorful brought you a chance to bring home the SL500 960 GB SATA SSD, a neat little addition to your battlestation as a game folder drive; with the added bling of its "Glacial Blue" metallic body finish. The drive combines a Maxiotech MAS0902 controller with 3D QLC NAND flash memory, offering sequential speeds of up to 560 MB/s reads and up to 470 MB/s writes. Without further ado, the Winner!

• John from Texas, USA

Congratulations John! Get ready to dump all your %GameDirs% in this nifty little drive!

Micron Technology has taped out its 4th generation 3D NAND flash memory with 128 layers. This paves the way for mass production and product implementations in 2020. The 4th gen 3D NAND by Micron continues to use a CMOS-under-array design, but with Replacement Gate (RG) Technology instead of Floating Gate, which Micron and the erstwhile IMFlash Technology had been using for years. Micron is currently mass-producing 96-layer 3D NAND flash, and TLC remains the prominent data-storage physical layer despite the advent of QLC (4 bits per cell).

Micron comments that this 4th gen 128-layer 3D NAND will be a stopgap restricted to a select few applications, and may not see the kind of adoption as its current 96-layer chips. The company appears to be more focused on its evolution, possibly the 5th generation 3D NAND, which are expected to bring tangible cost-per-bit gains for the company, as it transitions to a newer silicon fabrication node, and implements even newer technologies besides RG. "We achieved our first yielding dies using replacement gate or "RG" for short. This milestone further reduces the risk for our RG transition. As a reminder, our first RG node will be 128 layers and will be used for a select set of products. We don't expect RG to deliver meaningful cost reductions until FY2021 when our second-generation RG node is broadly deployed. Consequently, we are expecting minimal cost reductions in NAND in FY2020. Our RG production deployment approach will optimize the ROI of our NAND capital investments," said Sanjay Mehrotra, CEO and president of Micron.

Intel today at a press event in South Korea announced their plans for future product launches in the memory spaces. Optane is the name of the carriage Intel is pulling here - there's no novelty about that - and the company will be pushing a second generation release of Optane enterprise SSDs and Optane DC Persistent Memory modules. Most interesting for us down-to-earth PC enthusiasts, though - the market launch of 144 Layer QLC NAND in 2020, which should bring even lower pricing to NAND-based devices. Later, the company also plans to launch 144 layer TLC NAND solutions.

The new Optane modules apparently make use of first-generation 3D XPoint memory still - the love child of the now defunct Intel-Micron partnership. Intel's new Optane DC Persistent Memory products will materialize in codename Barlow Pass modules, with a release window around the likes of Cooper Lake (14nm) and Ice Lake (10nm) server processors scheduled for 2020. It seems that Intel's only consumer solution based in Optane - the Optane Memory H10 two-in-one SSD - is a lonely child effort which won't be joined by the previously-planned Optane Memory M15 (a dedicated cache drive for systems with mechanical-based storage, which are already on their way out) and Optane SSD 815P (which would only offer 118 GB of storage, clearly too little for current data storing trends in the overall market.

SK hynix Inc. announced today that it has developed and started mass-producing the world's first 128-Layer 1 Tb (Terabit) TLC (Triple-Level Cell) 4D NAND Flash, only eight months after the Company announced the 96-Layer 4D NAND Flash last year.

The 128-Layer 1 Tb NAND chip offers the industry's highest vertical stacking with more than 360 billion NAND cells, each of which stores 3 bits, per one chip. To achieve this, SK hynix applied innovative technologies, such as "ultra-homogeneous vertical etching technology," "high-reliability multi-layer thin-film cell formation technology," and ultra-fast low-power circuit design, to its own 4D NAND technology.

The new product provides the industry's highest density of 1 Tb for TLC NAND Flash. A number of companies including SK hynix have developed 1 Tb QLC (Quad-Level Cell) NAND products, but SK hynix is the first to commercialize the 1 Tb TLC NAND Flash. TLC accounts for more than 85% of the NAND Flash market with excellent performance and reliability.

A report from DigiTimes pits NAND manufacturers as accelerating their 120/128 layer 3D NAND technologies, aiming for volume production as early as 2020. Even as SK Hynix has begun sampling its 96-layer 4D NAND flash in March, Toshiba and Western Digital already had plans to introduce 128-layer technology, built on a TLC (Triple Level Cell) process technology so as to increase density while avoiding yield issues present with current QLC (Quad Level Cell) implementations.

The decision to accelerate deployment of the next generation of NAND comes from the fact that the market still faces an oversupply of NAND flash, mostly driven by the mature process of 64-layer NAND technology. With new technologies, higher ASPs and lower production scales are sustainable, which should enable supply to reduce enough so as to increase pricing of NAND-based technologies - and allow manufacturers to somewhat reset asking prices for new NAND chips.

It looks like SSDs will beat graphics cards to utilizing (and benefiting) from the bandwidth of PCI-Express gen 4.0 bus. AMD X570 platform motherboards offer 2-3 M.2 slots with PCIe gen 4.0 x4 wiring (64 Gbps). Corsair formally launched the MP600, and now ADATA joins the party with its unnamed drive. Based on the Silicon Motion SM2267 controller, the drive comes in an unbelievable capacity of up to 8 TB, probably using 96-layer QLC NAND flash.

The controller features DRAM cache, and dynamic SLC caching (all of the NAND flash is treated as SLC until storage demands force portions of them to be treated as MLC, TLC, and eventually QLC). It takes advantage of NVMe 1.3 protocol. As for performance, ADATA claims sequential speeds of up to 4000 MB/s reads. Such speeds were impossible of PCIe gen 3.0 x4 due to various overheads. Sequential writes are still up to 3000 MB/s. 4K random read/write access is rated at 400k IOPS. The company didn't reveal availability details.